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| 2N4856A/4857A/4858A N-Channel JFETs Product Summary Part Number 2N4856A 2N4857A 2N4858A VGS(off) (V) -4 to -10 -2 to -6 -0.8 to -4 V(BR)GSS Min (V) -40 -40 -40 IDSS Min (mA) 50 20 8 rDS(on) Max (W) 25 40 60 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 Features D D D D D Low On-Resistance: 2N4856A <25 W Fast Switching--tON: 4 ns High Off-Isolation--ID(off): 5 pA Low Capacitance: 3 pF Low Insertion Loss Benefits D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The 2N4856A/4857A/4858A all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and SOT-23 packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. TO 206AA (TO 18) S 1 2 D Top View 3 G and Case Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W Notes a. Derate 10 mW/_C for TC > 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70243. Siliconix S-52424--Rev. C, 14-Apr-97 1 2N4856A/4857A/4858A Specificationsa Limits 2N4856A 2N4857A 2N4858A Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Drain Cutoff Current Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = -10 V TA = 150_C ID = 5 mA -55 -40 -4 50 -10 -40 -2 20 -250 -500 -6 100 -250 -500 -40 V -0.8 8 -4 80 -250 -500 mA pA nA pA -5 -13 -5 5 13 0.25 0.35 0.5 250 500 250 500 250 500 0.5 nA Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA ID = 20 mA 0.5 0.75 25 40 60 V Drain-Source On-Resistanced Gate-Source Forward Voltaged rDS(on) VGS(F) VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7 W V Dynamic Common-Source Forward Transconductance d Common-Source Output Conductanced Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos rds(on) Ciss Crss en VDS = 10 V, ID = 10 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz 7 VDS = 0 V, VGS = -10 V S f = 1 MHz 3 3 4 3.5 3.5 nV Hz 6 VDS = 20 V, ID = 1 mA S f = 1 kHz 25 25 10 40 10 60 10 pF mS mS W Switching Turn-On Turn On Time Turn-Off Time td(on) tr tOFF VDD = 10 V VGSH = 0 V V, See Switching Circuit g 2 2 12 5 3 20 6 4 40 8 8 80 NCB ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v100 ms duty cycle v10%. d. This parameter not registered with JEDEC. 2 Siliconix S-52424--Rev. C, 14-Apr-97 2N4856A/4857A/4858A Typical Characteristics 100 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 200 rDS(on) - Drain-Source On-Resistance ( W ) I DSS - Saturation Drain Current (mA) 100 On-Resistance vs. Drain Current TA = 25_C 80 IDSS 160 80 VGS(off) = -2 V 60 rDS 120 60 40 80 40 -4 V -8 V 20 40 20 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 1 10 ID - Drain Current (mA) 100 On-Resistance vs. Temperature 200 rDS(on) - Drain-Source On-Resistance ( W ) 5 Turn-On Switching tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = -10 V tr td(on) @ ID = 12 mA ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns) 4 120 3 80 VGS(off) = -2 V -4 V 2 40 1 -8 V 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 30 0 0 td(on) @ ID = 3 mA -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 30 Turn-Off Switching td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = -10 V Capacitance vs. Gate-Source Voltage f = 1 MHz 24 Switching Time (ns) Capacitance (pF) 24 18 tf 12 td(off) 6 VGS(off) = -8 V 0 0 2 4 VGS(off) = -2 V 18 12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0 6 8 10 0 -4 -8 -12 -16 -20 ID - Drain Current (mA) VGS - Gate-Source Voltage (V) Siliconix S-52424--Rev. C, 14-Apr-97 3 2N4856A/4857A/4858A Typical Characteristics (Cont'd) 100 Noise Voltage vs. Frequency g fs - Forward Transconductance (mS) VDG = 10 V Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = kHz 40 gfs gos 400 g fs - Forward Transconductance ( m S) (nV / Hz) 30 300 e n - Noise Voltage 10 ID = 1 mA 20 200 ID = 10 mA 10 100 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 10 nA Gate Leakage Current IGSS @ 25_C 100 ID = 10 mA Common-Gate Input Admittance VDG = 10 V ID = 10 mA TA = 25_C 10 (mS) 1 mA big 1 nA I G - Gate Leakage TA = 125_C gig 100 pA 1 mA 10 pA TA = 25_C 1 pA 10 mA IGSS @ 25_C 1 IG(on) @ ID 0.1 pA 0 6 12 18 24 30 VDG - Drain-Gate Voltage (V) 0.1 100 200 500 1000 f - Frequency (MHz) Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1 10 Common-Gate Reverse Admittance VDG = 10 V ID = 10 mA TA = 25_C -brg +grg 0.1 -grg 1 0.1 100 200 500 1000 f - Frequency (MHz) 0.01 100 200 500 1000 f - Frequency (MHz) 4 Siliconix S-52424--Rev. C, 14-Apr-97 2N4856A/4857A/4858A Typical Characteristics (Cont'd) Common-Gate Output Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C bog 10 (mS) I D - Drain Current (mA) 20 Output Characteristics VGS(off) = -2 V 16 12 VGS = 0 V -0.2 V -0.4 V gog 1 8 -0.6 V -0.8 V 4 -1.0 V -1.2 V 0 0.2 0.4 0.6 0.8 1.0 0.1 100 200 500 1000 f - Frequency (MHz) 40 0 VDS - Drain-Source Voltage (V) 50 Output Characteristics VGS(off) = -4 V Output Characteristics VGS(off) = -8 V 32 I D - Drain Current (mA) I D - Drain Current (mA) 40 VGS = 0 V 30 -1 V -2 V -3 V 20 -4 V -5 V -6 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) 24 VGS = 0 V -0.5 V -1.0 V 16 -1.5 V -2.0 V 8 -2.5 V -3.0 V 10 0 Switching Time Test Circuit 2N4856A VGS(L) RL* ID(on) *Non-inductive -10 V 464 W 20 mA 2N4857A -6 V 953 W 10 mA 2N4858A -4 V 1910 W 5 mA VGS(H) VGS(L) 1 kW VIN Scope 51 W VDD RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 51 W Siliconix S-52424--Rev. C, 14-Apr-97 5 |
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